%0 Journal Article
%4 sid.inpe.br/mtc-m21b/2016/04.08.13.54
%2 sid.inpe.br/mtc-m21b/2016/04.08.13.54.09
%@doi 10.1016/j.diamond.2016.02.007
%@issn 0925-9635
%T Laser cladding of SiC multilayers for diamond deposition on steel substrates
%D 2016
%8 May
%9 journal article
%A Contin, André,
%A Vasconcelos, G. de,
%A Barquete, D. M.,
%A Campos, R. A.,
%A Trava Airoldi, Vladimir Jesus,
%A Corat, Evaldo José,
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto de Estudos Avançados (IEAv)
%@affiliation Universidade Estadual de Santa Cruz (UESC)
%@affiliation Instituto Federal de Educação, Ciência e Tecnologia de São Paulo (IFSP)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@affiliation Instituto Nacional de Pesquisas Espaciais (INPE)
%@electronicmailaddress andre.contin@las.inpe.br
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress
%@electronicmailaddress vladimir.airold@inpe.br
%@electronicmailaddress evaldo.corat@inpe.br
%B Diamond and Related Materials
%V 65
%P 105-114
%K Diamond film, HFCVD, Laser cladding.
%X It is well-known that growth and adhesion of polycrystalline diamond coating directly on steel are both problematic. To solve these issues, interlayers are needed. For the present study, diamond film was deposited on steel with intermediate barrier of silicon carbide (SiC). In addition, laser cladding process produced interlayer. Diamond films were grown by Hot Filament Chemical Vapor Deposition (HFCVD). During laser cladding process, SiC was partially dissociated and so, formation of FeSi was observed. Just 1-layer SiC was enough to grow diamond film since the iron is no longer free to migrate to the surface during the CVD deposition. Nevertheless, the high residual stress formed at the interface, during the reactor cooling, produces fragmentation of the diamond film grown with 1-layer SiC on the steel. To overcome the disadvantage, we propose to create SiC multilayers in an effort to reduce the influence of steel thermal expansion coefficient. Detailed characterization of the SiC interlayer, FeSi phase and diamond coating, are discussed based on X-ray Diffraction, Scanning Electron Microscopy and Raman Spectroscopy. Results showed that the presence of FeSi, formed by SiC dissociation, was the main reason for diffusion barrier effectiveness. Further, the use of SiC multilayers efficiently relaxed the high thermal stress.
%@language en
%3 contin_laser.pdf